BD895 데이터 시트보기 (PDF) - Bourns, Inc
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BD895 Datasheet PDF : 4 Pages
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BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BD895
45
Collector-emitter
V(BR)CEO breakdown voltage
IC = 100 mA IB = 0
BD897
60
(see Note 3)
BD899
80
BD901
100
VCE = 30 V
IB = 0
BD895
0.5
ICEO
Collector-emitter
cut-off current
VCE = 30 V
VCE = 40 V
IB = 0
IB = 0
BD897
0.5
BD899
0.5
VCE = 50 V
IB = 0
BD901
0.5
VCB = 45 V
IE = 0
BD895
0.2
VCB = 60 V
IE = 0
BD897
0.2
VCB = 80 V
IE = 0
BD899
0.2
ICBO
Collector cut-off
current
VCB = 100 V
VCB = 45 V
IE = 0
IE = 0
TC = 100°C
BD901
BD895
0.2
2
VCB = 60 V
IE = 0
TC = 100°C
BD897
2
VCB = 80 V
IE = 0
TC = 100°C
BD899
2
VCB = 100 V
IE = 0
TC = 100°C
BD901
2
Emitter cut-off
IEBO current
VEB = 5 V
IC = 0
(see Notes 3 and 4)
2
Forward current
hFE
transfer ratio
VCE = 3 V
IC = 3 A
(see Notes 3 and 4)
750
Collector-emitter
VCE(sat) saturation voltage
IB = 12 mA IC = 3 A
(see Notes 3 and 4)
2.5
Base-emitter
VBE(on) voltage
VCE = 3 V
IC = 3 A
(see Notes 3 and 4)
2.5
Parallel diode
VF
forward voltage
IF = 8 A
3.5
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.79 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton Turn-on time
toff
Turn-off time
IC = 3 A
VBE(off) = -3.5 V
IB(on) = 12 mA
RL = 10 Ω
IB(off) = -12 mA
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1
µs
5
µs
PRODUCT INFORMATION
2
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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