BD304 데이터 시트보기 (PDF) - Inchange Semiconductor

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BD304

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD304

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -200mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -0.3A

VBE(sat) Base-Emitter Saturation Voltage

IC= -3A; IB=B -0.3A

ICEO

Collector Cutoff Current

VCE= -30V; IB=B 0

ICBO

Collector Cutoff Current

VCB= -40V; IE= 0; TC= 150℃

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE

DC Current Gain

IC= -2A; VCE= -2V

fT

Current-Gain—Bandwidth Product

IC= -0.3A; VCE= -3V

-60

V

-1.0

V

-1.5

V

-1.0 mA

-1.0 mA

-5.0 mA

30

3

MHz

isc Website：www.iscsemi.cn

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