BD3021HFP-M 데이터 시트보기 (PDF) - ROHM Semiconductor
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BD3021HFP-M Datasheet PDF : 15 Pages
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BD3021HFP-M
Technical Note
12. Positive voltage surges on VCC pin
A power zener diode should be inserted between VCC and GND for protection against voltage surges of more than 50V on
the VCC pin.
Vcc
GND
13. Negative voltage surges on VCC pin
A schottky barrier diode should be inserted between VCC and GND for protection against voltages lower than GND on the
VCC pin.
Vcc
GND
14. Output protection diode
Loads with large inductance components may cause reverse current flow during startup or shutdown.
In such cases, a protection diode should be inserted on the output to protect the IC.
15. Regarding input pins of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
PN junctions are formed at the intersection of these P layers with the N layers of other elements, creating parasitic diodes
and/or transistors.
For example (refer to the figure below):
○When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode
○When GND > Pin B, the PN junction operates as a parasitic transistor
Parasitic diodes occur inevitably in the structure of the IC, and the operation of these parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
(Pin A)
Resistor
(Pin B)
Transistor (NPN)
B
C
E
(Pin B)
BC
E
P+
P
P+
N
P+
P
P+
GND
N
N
N
N
P
Parasitic elements
N
N
P substrate
Parasitic elements
or transistors
GND
Parasitic elements
or transistors
GND
(Pin A)
Parasitic elements
Example of Simple Monolithic IC Architecture
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2010.11 - Rev.A
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