BC856S 데이터 시트보기 (PDF) - Infineon Technologies

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BC856S

PNP Silicon AF Transistor Arrays

Infineon Technologies 

BC856S/U_BC857S

Maximum Ratings

Parameter

Collector-emitter voltage

BC856S/U

BC857S

Symbol

VCEO

Collector-base voltage

BC856S, BC856U

BC857S

VCBO

Emitter-base voltage

Collector current

Peak collector current

Total power dissipation-

TS ≤ 115 °C, BC856S

TS ≤ 118 °C, BC856U, BC857U

Junction temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point1)

BC856S, BC857S

BC856U

VEBO

IC

ICM

Ptot

Tj

Tstg

Symbol

RthJS

1For calculation of RthJA please refer to Application Note Thermal Resistance

Value

65

45

80

50

5

100

200

250

250

150

-65 ... 150

Value

≤ 140

≤ 130

Unit

-

V

mA

-

°C

Unit

K/W

2

2008-01-18

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