BC856T 데이터 시트보기 (PDF) - Infineon Technologies

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BC856T

PNP Silicon AF Transistor

Infineon Technologies 

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

AC Characteristics per Transistor

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

fT

-

250

-

Ccb

-

3

-

Ceb

-

8

-

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz BC856AT

IC = 2 mA, VCE = 5 V, f = 1 kHz BC856BT

h11e

-

2.7

-

-

4.5

-

Open-circuit reverse voltage transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz BC856AT

IC = 2 mA, VCE = 5 V, f = 1 kHz BC856BT

h12e

-

1.5

-

-

2

-

Short-circuit forward current transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz BC856AT

IC = 2 mA, VCE = 5 V, f = 1 kHz BC856BT

h21e

-

200

-

-

330

-

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz BC856AT

IC = 2 mA, VCE = 5 V, f = 1 kHz BC856BT

h22e

-

18

-

-

30

-

Unit

MHz

pF

k

10-4

-

S

3

Jan-08-2002

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