BC337 데이터 시트보기 (PDF) - ON Semiconductor

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BC337

Amplifier Transistors NPN Silicon

ON Semiconductor 

BC337, BC337−16, BC337−25, BC337−40, BC338−25

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = 10 mA, IB = 0)

BC338

BC337

Collector −Emitter Breakdown Voltage

(IC = 100 mA, IE = 0)

BC337

BC338

Emitter −Base Breakdown Voltage

(IE = 10 mA, IC = 0)

Collector Cutoff Current

(VCB = 30 V, IE = 0)

(VCB = 20 V, IE = 0)

Collector Cutoff Current

(VCE = 45 V, VBE = 0)

(VCE = 25 V, VBE = 0)

Emitter Cutoff Current

(VEB = 4.0 V, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mA, VCE = 1.0 V)

(IC = 300 mA, VCE = 1.0 V)

BC337

BC338

BC337

BC338

BC337

BC337−16

BC337−25/BC338−25

BC337−40

Base−Emitter On Voltage

(IC = 300 mA, VCE = 1.0 V)

Collector −Emitter Saturation Voltage

(IC = 500 mA, IB = 50 mA)

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 10 V, IE = 0, f = 1.0 MHz)

Current −Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

Symbol

V(BR)CEO

V(BR)CES

V(BR)EBO

ICBO

ICES

IEBO

hFE

VBE(on)

VCE(sat)

Cob

fT

Min

Typ

Max Unit

45

−

25

−

50

−

30

−

5.0

−

Vdc

−

−

Vdc

−

−

−

Vdc

nAdc

−

−

100

−

−

100

nAdc

−

−

100

−

−

100

−

−

100 nAdc

−

100

−

630

100

−

250

160

−

400

250

−

630

60

−

−

−

−

1.2

Vdc

−

−

0.7

Vdc

−

15

−

pF

−

210

−

MHz

1.0

0.7

D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1 0.05

0.07 0.02

0.05

0.03

0.01

0.02

SINGLE PULSE

SINGLE PULSE

0.01

0.001 0.002

0.005 0.01 0.02

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.05 0.1 0.2

0.5 1.0 2.0

t, TIME (SECONDS)

Figure 1. Thermal Response

qJC(t) = (t) qJC

qJC = 100°C/W MAX

qJA(t) = r(t) qJA

qJA = 375°C/W MAX

D CURVES APPLY FOR

POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

5.0 10 20

50 100

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