BB505M 데이터 시트보기 (PDF) - Renesas Electronics

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BB505M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB505M

Electrical Characteristics

Item

Drain to source breakdown

voltage

Gate1 to source breakdown

voltage

Gate2 to source breakdown

voltage

Gate1 to source cutoff current

Gate2 to source cutoff current

Gate1 to source cutoff voltage

Gate2 to source cutoff voltage

Drain current

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Power gain

Noise figure

Symbol

V(BR)DSS

Min

6

V(BR)G1SS

+6

V(BR)G2SS

+6

IG1SS

—

IG2SS

—

VG1S(off)

0.5

VG2S(off)

0.5

ID(op)

7

|yfs|

28

Ciss

1.4

Coss

1.0

Crss

—

PG

19

NF

—

Typ

—

—

—

—

—

0.7

0.7

11

33

1.75

1.4

0.03

24

1.5

Max

—

—

—

+100

+100

1.0

1.0

15

38

2.1

1.8

0.05

29

2.2

Unit

V

(Ta = 25°C)

Test Conditions

ID = 200 µA, VG1S = VG2S = 0

V IG1 = +10 µA, VG2S = VDS = 0

V IG2 = +10 µA, VG1S = VDS = 0

nA VG1S = +5 V, VG2S = VDS = 0

nA VG2S = +5 V, VG1S = VDS = 0

V VDS = 5 V, VG2S = 4 V, ID = 100 µA

V VDS = 5 V, VG1S = 5 V, ID = 100 µA

mA VDS = 5 V, VG1 = 5 V, VG2S = 4 V

RG = 220 kΩ

mS VDS = 5 V, VG1 = 5 V, VG2S = 4 V

RG = 220 kΩ, f = 1 kHz

pF VDS = 5 V, VG1 = 5 V, VG2S = 4 V

pF RG = 220 kΩ, f = 1 MHz

pF

dB VDS = 5 V, VG1 = 5 V, VG2S = 4 V

dB RG = 220 kΩ, f = 900 MHz

Bias Circuit for Operating Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG)

VG2

Gate 2

RG

VG1

Gate 1

Drain

A

ID

Source

Rev.1.00, Jun.14.2004, page 2 of 8

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