BAP51-04W 데이터 시트보기 (PDF) - NXP Semiconductors.
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BAP51-04W Datasheet PDF : 7 Pages
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Philips Semiconductors
General purpose PIN diode
Preliminary specification
BAP51-04W
GRAPHICAL DATA
102
handbook, halfpage
rD
(Ω)
10
MLD507
1
10−110−1
1
10
102
IF (mA)
f = 100 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of forward
current; typical values.
500
handbook, halfpage
Cd
(fF)
400
MLD508
300
200
100
0
0
4
8
12
16
20
VR (V)
f = 100 MHz; Tj = 25 °C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
0
handbook, halfpage
|S21| 2
(dB)
− 0.5
−1
(1) (2) (3)
MGS659
−1.5
−2
− 2.5
0.5
1
1.5
2
2.5
3
f (GHz)
(1) IF = 10 mA.
(2) IF = 1 mA
(3) IF = 0.5 mA
Diode inserted in series with a 50 Ω stripline circuit and biased via the
analyzer Tee network. Tamb = 25 °C.
Fig.4 Insertion loss (|s21|2) of the diode as a
function of frequency; typical values.
handbook, h0alfpage
s21 2
(dB)
−10
MLD509
−20
−30
−40
−50
0.5
1
1.5
2
2.5
3
f (GHz)
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Fig.5 Isolation (|s21|2) of the diode as a function of
frequency; typical values.
2002 Feb 19
4
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