BA5983FM 데이터 시트보기 (PDF) - ROHM Semiconductor
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BA5983FM Datasheet PDF : 6 Pages
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{ ELECTRIC CHARACTERISTICS (Ta=25°C, Vcc=12V, PVcc1=PVcc2=5V, BIAS=2.5V, RL=8Ω, Rd=0.5Ω,
C=100pF, unless otherwise noted.)
Parameter
Symbol MIN.
TYP
MAX. Unit
Condition
Quiescent Consumption
Current
IQ
-
20
30
mA No load applied
CH1, 2, 3 Standby IQST
IQST1
-
6.2
13
mA No load applied (IQ of Pre only)
CH4 Standby IQST
IQST2
-
16
26
mA No load applied (IQ of Pre only)
All CHs Standby IQST
IQST3
-
-
1
mA No load applied (IQ of Pre only)
<Driver>
Output Offset Voltage
VOOF
-70
0
70
mV
Maximum Output Amplitude
1
VOM1
3.6
4.0
-
V CH1,2 VIN=VBIAS ± 1.65V
Maximum Output Amplitude
2
VOM2
7.5
9
-
V CH3,4 VIN=VBIAS ± 1.65V *
Voltage Gain 1
GVC1
10
12
14
dB CH1,2 VIN=VBIAS ± 0.5V
Voltage Gain 2
GVC2
16
18
20
dB CH3,4 VIN=VBIAS ± 0.5V *
Slew Rate
Standby ON Voltage
SRDRV
-
VSTON
-
2
-
V/µs
Input square wave, 100kHz,
2VP¯P
-
0.5
V
Standby OFF Voltage
VSTOFF 2.0
-
-
V
Bias Drop Mute ON Voltage VBMON
-
-
0.7
V
Bias Drop Mute OFF
Voltage
VBMOFF 1.3
-
-
V
<Pre-stage Operational Amplifier>
Input Range (buffer in use)
VICM
0
-
9
V
Input Offset Voltage
VOFOP
-6
0
6
mV
Input Bias Current
VBOP
-
-
300
nA
High-level Output Voltage
VOHOP
9
11
-
V VBIAS=6V
Low-level Output Voltage
VOLOP
-
-
0.3
V VBIAS=6V
Output Driving Current Sink
ISI
1
-
-
mA
VBIAS=6V VCC with 50Ω
attached
Output Driving Current
Source
ISO
300
500
-
µA VBIAS=6V GND with 50Ω
Slew Rate
SROP
-
2
-
V/µs
Input square wave, 100kHz,
2VP¯P
{ OUTLINE DIMENSIONS, SYMBOLS
(MAX 18.85 include BURR)
BA5983FM
Product
number
Lot No.
REV. A
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