BA5810FM-E2 데이터 시트보기 (PDF) - ROHM Semiconductor
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BA5810FM-E2 Datasheet PDF : 3 Pages
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Guaranteed operating ranges (Ta=25 ˚C)
Parameter
Symbol Min.
Power supply voltage
PREVcc 4.3
POWVcc 4.3
Typ. Max. Unit
—
13.2
V
— PREVcc V
Electrical characteristics
(Unless otherwise noted, Ta=25˚C, PREVcc=RVcc=8V, POWVcc1,2=5V, BIAS=1.65V, R L=8Ω )
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Quiescent current
ICC
—
17
23
mA No load
<BTL driver>
Output offset voltage
Voo
–50
0
50
mV
Maximum output voltage
VOM
3.6
4.0
—
V
Closed loop voltage gain (CH1)
GVC1
16.2 18.0 19.8
dB
Closed loop voltage gain (CH2)
GVC2
22.7 24.5 26.3
dB
Closed loop voltage gain (CH3, 4) GVC3
10.5 12.0 13.5
dB
<Regulator>
Threshold voltage of REG-P pin VREGPTH 1.14 1.20 1.26
V
Output sink current of REG-B pin ISIN
10
—
—
mA
Input bias current of REG-P pin
IBOP
—
20
300
nA
<Loading driver>
Output saturation voltage 1
VSAT1
0.7
1.1
1.5
V I L=200mA (Upper + Lower)
Output adjustable gain on
"H" side voltage
GVH
7.4
9.2 11.0
dB "H" side output for GND
This product is not designed for protection against radioactive rays.
Application circuit
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