B80C800G-E4/51 데이터 시트보기 (PDF) - Vishay Semiconductors
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B80C800G-E4/51 Datasheet PDF : 4 Pages
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B40C800G, B80C800G, B125C800G, B250C800G, B380C800G
www.vishay.com
Vishay Semiconductors
10
1
TJ = 100 °C
0.1
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.01
0
TJ = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics Per Diode
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.160 (4.1)
0.032 (0.81)
0.028 (0.71)
0.348 (8.84)
0.308 (7.82)
1.0 (25.4) MIN.
0.060 (1.52)
0.020 (0.51)
0.220 (5.6)
0.180 (4.6)
0.220 (5.6)
0.180 (4.6)
Revision: 08-Jul-13
3
Document Number: 88534
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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