ATP106(2009) 데이터 시트보기 (PDF) - SANYO -> Panasonic

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ATP106
(Rev.:2009)

P-Channel Silicon MOSFET

SANYO -> Panasonic 

ATP106

Continued from preceding page.

Parameter

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

VDS=--10V, ID=--1mA

VDS=--10V, ID=--15A

ID=--15A, VGS=--10V

ID=--8A, VGS=--4.5V

VDS=--20V, f=1MHz

VDS=--20V, f=1MHz

VDS=--20V, f=1MHz

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

VDS=--20V, VGS=--10V, ID=--30A

VDS=--20V, VGS=--10V, ID=--30A

VDS=--20V, VGS=--10V, ID=--30A

IS=--30A, VGS=0V

Package Dimensions

unit : mm (typ)

7057-001

6.5

1.5

4.6

2.6

0.4

0.4

4

Ratings

Unit

min

typ

max

--1.5

--2.6

V

28

S

19

25 mΩ

29

41 mΩ

1380

pF

210

pF

150

pF

12

ns

120

ns

110

ns

90

ns

29

nC

6.4

nC

5.9

nC

--0.97

--1.5

V

2

1

3

0.8

0.6

2.3 2.3

0.55

0.4

1 : Gate

2 : Drain

3 : Source

4 : Drain

SANYO : ATPAK

Switching Time Test Circuit

VIN

0V

--10V

VIN

PW=10μs

D.C.≤1%

G

VDD= --20V

ID= --15A

RL=1.33Ω

D

VOUT

ATP106

P.G

50Ω

S

No. A1597-2/4

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