AT49BV160D 데이터 시트보기 (PDF) - Atmel Corporation

부품명

상세내역

일치하는 목록

AT49BV160D

16-megabit (1M x 16) 3-volt Only Flash Memory

Atmel Corporation 

3. Block Diagram

I/O0 - I/O15

AT49BV160D(T)

OUTPUT

BUFFER

INPUT

BUFFER

A0 - A19

INPUT

BUFFER

ADDRESS

LATCH

Y-DECODER

X-DECODER

IDENTIFIER

REGISTER

STATUS

REGISTER

DATA

COMPARATOR

Y-GATING

MAIN

MEMORY

COMMAND

REGISTER

WRITE STATE

MACHINE

CE

WE

OE

RESET

WP

PROGRAM/ERASE

VOLTAGE SWITCH

VPP

VCC

GND

4. Device Operation

4.1 Command Sequences

When the device is first powered on, it will be in the read mode. In order to perform other device

functions, a series of command sequences are entered into the device. The command

sequences are shown in the “Command Definition Table” on page 15 (I/O8 - I/O15 are don’t care

inputs for the command codes). The command sequences are written by applying a low pulse

on the WE or CE input with CE or WE low (respectively) and OE high. The address and data are

latched by the first rising edge of CE or WE. Standard microprocessor write timings are used.

The address locations used in the command sequences are not affected by entering the com-

mand sequences.

4.2 Read

When the AT49BV160D(T) is in the read mode, with CE and OE low and WE high, the data

stored at the memory location determined by the address pins are asserted on the outputs. The

outputs are put in the high impedance state whenever CE or OE is high. This dual-line control

gives designers flexibility in preventing bus contention.

3

3591C–FLASH–6/06

Share Link: