AS7C31025B 데이터 시트보기 (PDF) - Alliance Semiconductor

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AS7C31025B

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Alliance Semiconductor 

AS7C31025B

®

Recommended operating conditions

Parameter

Symbol

Supply voltage

Input voltage

Ambient operating temperature

VIL = -1.0V for pulse width less than 5ns

VIH = VCC + 1.5V for pulse width less than 5ns

VCC

VIH

VIL

TA

TA

Min

Nominal

Max

Unit

3.0

3.3

3.6

V

2.0

–

VCC + 0.5

V

–0.5

–

0.8

V

0

–

70

oC

–40

–

85

oC

DC operating characteristics (over the operating range)1

-10

-12

-15

-20

Parameter Sym

Test conditions

Min Max Min Max Min Max Min Max Unit

Input leakage

current

| ILI | VCC = Max, VIN = GND to VCC –

1

–

1

–

1

–

1 µA

Output leakage

current

| ILO |

VCC = Max, CE = VIH,

Vout = GND to VCC

–

1

–

1

–

1

–

1 µA

Operating power

supply current

ICC

VCC = Max

CE ≤ VIL, f = fMax,

IOUT = 0 mA

– 70 – 65 – 60 – 55 mA

Standby power

supply current1

ISB

VCC = Max

CE ≥ VIH, f = fMax

– 30 – 25 – 20 – 20 mA

VCC = Max, CE ≥ VCC–0.2 V,

ISB1 VIN ≤ 0.2 V or VIN ≥ VCC –0.2 V, –

5

–

5

–

5

–

5 mA

f=0

Output voltage

VOL

VOH

IOL = 8 mA, VCC = Min

IOH = –4 mA, VCC = Min

– 0.4 – 0.4 – 0.4 – 0.4 V

2.4 – 2.4 – 2.4 – 2.4 – V

Capacitance (f = 1 MHz, Ta = 25o C, VCC = NOMINAL)2

Parameter

Symbol

Signals

Test conditions

Max

Unit

Input capacitance

I/O capacitance

CIN

A, CE, WE, OE

VIN = 0 V

5

pF

CI/O

I/O

VIN = VOUT = 0 V

7

pF

3/24/04, v. 1.3

Alliance Semiconductor

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