APM4429 데이터 시트보기 (PDF) - Anpec Electronics

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APM4429

P-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM4429

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

PD

TJ)TSTG

RθJA*

Parameter

Maximum Power Dissipation

TA = 25°C

TA = 100°C

Maximum Operating and Storage Junction Temperature

Thermal Resistance - Junction to Ambient

Rating

2.5

1.0

-55 to 150

62.5

Unit

W

°C

°C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

Sym bo l

Param eter

Test Condition

Static

BVDSS

IDSS

V GS(th)

IGSS

Drain-Source Breakdown

Voltage

Zero G ate Voltage D rain

Current

G ate T hreshold Voltage

Gate Leakage Current

Drain-Source O n-state

R DS(ON) R esistance>

VSD

Diode Forward Voltage>

Dynam ic=

VGS=0V , IDS=-250µA

VDS=-24V , VGS=0V

VDS=VGS , IDS=-250µA

VGS=±20V , VDS=0V

VGS=-20V , IDS=-13A

VGS=-10V , IDS=-13A

VGS=-4.5V , ID=-12A

ISD=-3A, VGS=0V

Qg

Q gs

Q gd

td(O N )

Tr

td(O F F )

Tf

C iss

C oss

C rss

Total G ate C harge

VDS=-15V , VGS=-10V

Gate-Source Charge

lD = -1 3 A

G ate-Drain C harge

Turn-on Delay Tim e

Turn-on Rise Tim e

Turn-off Delay Tim e

Turn-off Fall Tim e

VDD=-15V , ID=-1A ,

VGEN=-10V , RG=6Ω

RL=15Ω

Input C apacitance

VGS=0V

O utput Capacitance

VDS=-25V

Reverse Transfer Capacitance Frequency=1.0M H z



  N otesa : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b : Guaranteed by design, not subject to production testing

APM 4429

M in. Typ=. M ax.

U n it

-30

V

-1

µA

-1

-1.5

-2

V

±100

nA

8

11

9

12

mΩ

13

17

-0.7 -1.3

V

105 135

10.8

nC

13.6

15

30

20

30

ns

55

85

40

65

4730

800

pF

240

Copyright  ANPEC Electronics Corp.

2

Rev. A.1 - Sep., 2003

www.anpec.com.tw

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