RFP2N08L 데이터 시트보기 (PDF) - Intersil
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RFP2N08L Datasheet PDF : 5 Pages
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RFP2N08L, RFP2N10L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP2N08L
80
80
2
5
±10
25
0.2
-55 to 150
300
260
RFP2N10L
100
100
2
5
±10
25
0.2
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
RFP2N08L
80
RFP2N10L
100
Gate to Threshold Voltage
Gate to Source Leakage
Zero to Gate Voltage Drain Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH) VGS = VDS, ID = 250µA
1.0
IGSS VGS = ±10V, VDS = 0V
-
IDSS
VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC -
VDS(ON) ID = 2A, VGS = 5V
-
rDS(ON) ID = 2A, VGS = 5V, (Figures 6, 7)
-
td(ON) ID = 2A, VDD = 50V, RG = 6.25Ω,
-
tr
RL = 25Ω, VGS = 5V
(Figures 10, 11, 12)
-
td(OFF)
-
tf
-
CISS VGS = 0V, VDS = 25V, f = 1.0MHz
-
(Figure 9)
COSS
-
CRSS
-
RθJC
-
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 2A
-
Reverse Recovery Time
trr
ISD = 2A, dISD/dt = 50A/µs
-
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
TYP MAX UNITS
-
-
V
-
-
V
-
2.0
V
- ±100 nA
-
1.0
µA
-
25
µA
-
2.1
V
- 1.050 Ω
10 25
ns
15 45
ns
25 45
ns
20 25
ns
-
200
pF
-
80
pF
-
35
pF
-
5
oC/W
TYP MAX UNITS
-
1.4
V
100
-
ns
6-249
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