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RFL2N06L Datasheet PDF : 5 Pages
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Data Sheet
RFL2N06L
October 1999 File Number 1560.3
2A, 60V, 0.950 Ohm, Logic Level,
N-Channel Power MOSFET
The RFL2N06L N-channel enhancement mode silicon gate
power field effect transistor is designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9520.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL2N06L
TO-205AF
RFL2N06L
NOTE: When ordering, use the entire part number.
Features
• 2A, 50V and 60V
• rDS(ON) = 0.950Ω
• Design Optimized for 5V Gate Drives
• Can be Driven from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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