AP4405GM 데이터 시트보기 (PDF) - Advanced Power Electronics Corp
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AP4405GM Datasheet PDF : 5 Pages
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50
T A = 25 o C
- 10 V
- 7.0 V
40
- 6.0 V
- 5.0 V
V G = - 4.0 V
30
20
10
0
0
0
1
1
2
2
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
14
I D = - 10 A
T A =25 ℃
12
10
8
6
2
4
6
8
10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
12
T j =150 o C
8
T j =25 o C
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP4405GM
50
T A = 150 o C
40
30
- 10 V
- 7.0 V
- 6.0 V
- 5.0 V
V G = - 4.0 V
20
10
0
0
0
1
1
2
2
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D = - 13 A
1.8 V G =-10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.6
2.2
1.8
1.4
1
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
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