AO4429 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
부품명
상세내역
일치하는 목록
AO4429 Datasheet PDF : 4 Pages
| |||
AO4429
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4429 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch. The device is ESD protected. Standard
Product AO4429 is Pb-free (meets ROHS & Sony
259 specifications). AO4429L is a Green Product
ordering option. AO4429 and AO4429L are
electrically identical.
Features
VDS (V) = -30V
ID = -15 A (VGS = -10V)
Max RDS(ON) < 7.7mΩ (VGS = -10V)
Max RDS(ON) < 12mΩ (VGS = -4.5V)
ESD Rating: 4KV HBM
SOIC-8
Top View
S
D
S
D
S
D
G
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-15
-12.8
-80
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
26
50
Maximum Junction-to-Lead C
Steady-State
RθJL
14
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
Share Link: 