AN80XX 데이터 시트보기 (PDF) - Panasonic Corporation
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AN80XX Datasheet PDF : 9 Pages
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AN80xx/AN80xxM Series
I Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Rating
Unit
Supply voltage
VI
20
V
Supply current
ICC
100
mA
Power dissipation
PD
650 *
mW
Operating ambient temperature
Topr
−30 to +80
°C
AN80xx series
−55 to +150
Storage temperature
Tstg
AN80xxM series
−55 to +125
°C
* AN80xxM series is mounted on standard board (glass epoxy: 20mm × 20mm × t1.7mm with Cu foil of 1cm2 or more).
I Electrical Characteristics at Ta = 25°C
• AN8002, AN8002M (2V type)
Parameter
Symbol
Conditions
Min Typ Max Unit
Output voltage
VO
Tj = 25°C
1.92
2 2.08
V
Line regulation
REGIN VI = 2.5 to 8V, Tj = 25°C
2
40 mV
Load regulation
REGL
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
7
20 mV
10
25 mV
Minimum input/output voltage difference
VDIF(min)
VI = 1.9V, IO = 20mA, Tj = 25°C
VI = 1.9V, IO = 50mA, Tj = 25°C
0.06
0.2
V
0.12
0.3
V
Bias current
IBias
IO = 0mA, Tj = 25°C
0.6
1 mA
Ripple rejection ratio
RR VI = 3 to 5V, f = 120Hz
62
74
dB
Output noise voltage
Vno
f = 10Hz to 100kHz
60
µV
Output voltage temperature coefficient
∆VO/Ta Tj = −30 to +125°C
0.1
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 3V, IO = 20mA and CO = 10µF.
• AN8025, AN8025M (2.5V type)
Parameter
Symbol
Conditions
Min Typ Max Unit
Output voltage
VO
Tj = 25°C
2.4
2.5
2.6
V
Line regulation
REGIN VI = 3 to 8.5V, Tj = 25°C
2.5
50
mV
Load regulation
REGL
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
8
20
mV
12.5
25
mV
Minimum input/output voltage difference
VDIF(min)
VI = 2.4V, IO = 20mA, Tj = 25°C
VI = 2.4V, IO = 50mA, Tj = 25°C
0.07
0.2
V
0.12
0.3
V
Bias current
IBias
IO = 0mA, Tj = 25°C
0.6
1
mA
Ripple rejection ratio
RR VI = 3.5 to 5.5V, f = 120Hz
60
72
dB
Output noise voltage
Vno
f = 10Hz to 100kHz
65
µV
Output voltage temperature coefficient
∆VO/Ta Tj = −30 to +125°C
0.13
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 3.5V, IO = 20mA and CO = 10µF.
2
SFF00007CEB
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