D2153(RevA) 데이터 시트보기 (PDF) - ROHM Semiconductor

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D2153
(Rev.:RevA)

High gain amplifier transistor (25V, 2A)

ROHM Semiconductor 

Transistors

2SD2153

High gain amplifier transistor (25V, 2A)

2SD2153

zFeatures

1) Low saturation voltage,

typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA

2) Excellent DC current gain characteristics.

zExternal dimensions (Unit : mm)

4.0

1.0

2.5 0.5

(1)

(2)

(3)

ROHM : MPT3

EIAJ : SC-62

(1) Base

(2) Collector

(3) Emitter

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Collector-base voltage

VCBO

30

Collector-emitter voltage

VCEO

25

Emitter-base voltage

VEBO

6

Collector current

2

IC

3

Collector power dissipation

0.5

PC

2 ∗2

Junction temperature

Tj

150

Storage temperature

Tstg

−55 to +150

∗1 Single pulse, Pw=10ms

∗2 Mounted on a 40 40 t0.7mm Ceramic substrate

Unit

V

V

V

A(DC)

A(Pulse) ∗1

W

°C

°C

zPackaging specifications and hFE

Type

Package

hFE

Marking

Code

Basic ordering unit (pieces)

∗ Denotes hFE

2SD2153

MPT3

UVW

DN ∗

T100

1000

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

BVCBO

30

−

−

V

IC = 50µA

Collector-emitter breakdown voltage

BVCEO

25

−

−

V

IC = 1mA

Emitter-base breakdown voltage

BVEBO

6

−

−

V

IE = 50µA

Collector cutoff current

ICBO

−

−

0.5

µA VCB = 20V

Emitter cutoff current

IEBO

−

−

0.5

µA VEB = 5V

Collector-emitter saturation voltage

VCE(sat)

−

0.12

0.5

V

IC/IB = 1A/20mA

∗

DC current transfer ratio

hFE

560

−

2700

−

VCE/IC = 6V/0.5A

Transition frequency

fT

−

110

−

MHz VCE = 10V , IE = −10mA , f= 100MHz

Output capacitance

Cob

−

22

−

pF VCB = 10V , IE = 0A , f = 1MHz

∗ Measured using pulse current.

Rev.A

1/2

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