HN29W25611T-50 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HN29W25611T-50

256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Hitachi -> Renesas Electronics 

HN29W25611 Series

Status Transition

Deep

standby

VCC

RES

Power off

00H/F0H

FFH

CE

Read (1) / (2) SA (1), SA (2)

setup

Column address

CA(1)

CA(2)

input

CA(1)'

CA(2)'

OE

SC

Sector address OE, SC

input

Read (1) / (2)

CE

Standby

90H

FFH

CE

ID read setup CDE, OE ID read

20H

FFH

Sector

Erase setup

SA (1), SA (2)

Sector

B0H

address input

BUSY

Erase OE Status register

start

read

Erase finish

Column address SC, CDE

input

PD(m)

CA(1)

CA(2)

CA(1)' to

CA(2)' PD(m+j)

10H

Output /11H

Program

PD0 to

SA (1),

SA (2)

PD2111

Sector address

Program

40H Program

OE

disable

(1)/(4) setup

input

data input

start

FFH

SC, CDE

Status register

read

Program finish

1FH

SA (1),

/0FH Program (2)/(3) SA (2)

setup

FFH

PD0 to

PD2111*3

Sector address

Program

40H

Program

input SC, CDE data input

start

Program finish

Status register clear 50H

OE Status register

read

Program error or

Erase error

CE*2

FFH*2

OE Status register

read

Error CE

standby

*4

ERROR

01H*1 Data recovery OE, SC Data recovery

read setup

read

Output

12H*1

Program retry

SA(1)

SA(2)

Sector address 40H

disable

FFH

setup

input

OE

Status register

read

Notes: 1. (01H)/(12H) Data recovery read/write can be used only for Program (1), (2), (3), (4) errors.

2. When reset is done by CE or FFH, error status flag is cleared.

3. When Program (3) mode, input data is PD2048 to PD2111.

4. When Error standby, ICC3 level is current.

16

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