AM2313P 데이터 시트보기 (PDF) - Analog Power

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AM2313P

P - Channel Logic Level MOSFET

Analog Power 

Analog Power

AM2313P

P - Channel Logic Level MOSFET

These miniature surface mount MOSFETs

utilize High Cell Density process. Low

rDS(on) assures minimal power loss and

conserves energy, making this device ideal

for use in power management circuitry.

Typical applications are voltage control

small signal switch, power management in

portable and battery-powered products and

most low current high side switch.

•

Low rDS(on) Provides Higher Efficiency and

Extends Battery Life

• Fast Switch

• Low Gate Charge

• High Saturation Current

• Miniature SOT-23 Surface Mount Package

Saves Board Space

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

-60

10 @ VGS = -10 V

20 @ VGS = -4.5V

G

S

ID (A)

-0.2

-0.12

D

ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)

Parame te r

Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Currenta

Pulsed Drain Currentb

VDS

VGS

TA=25oC

TA=70oC

ID

IDM

-60

V

±20

±0.12

±0.09 A

±1

Continuous Source Current (Diode Conduction)a

IS

0.24

A

Power Dissipationa

Operating Junction and Storage Temperature Range

TA=25oC

TA=70oC

PD

0.36

W

0.29

TJ, Tstg -55 to 150 oC

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambienta

t <= 5 sec

Steady-State

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Symbol

RT HJA

Maximum Units

350

oC/W

400

July, 2002 - Rev. A

PRELIMINARY

1

Publication Order Number:

DS-AM2313_B

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