ALD114804(2005) 데이터 시트보기 (PDF) - Advanced Linear Devices

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ALD114804
(Rev.:2005)

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® MATCHED PAIR MOSFET ARRAY

Advanced Linear Devices 

ABSOLUTE MAXIMUM RATINGS

Drain-Source voltage, VDS

Gate-Source voltage, VGS

Power dissipation

Operating temperature range PA, SA, PC, SC package

Storage temperature range

Lead temperature, 10 seconds

10.6V

10.6V

500 mW

0°C to +70°C

-65°C to +150°C

+260°C

OPERATING ELECTRICAL CHARACTERISTICS

V+ = +5V (or open) V- = -5V TA = 25°C unless otherwise specified

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

ALD114808A / ALD114908A ALD110848 / ALD114908

Parameter

Symbol

Min

Typ

Max Min Typ

Max Unit

Test Condition

Gate Threshold Voltage

Offset Voltage

VGS1-VGS2

VGS1-VGS2 Tempco

GateThreshold Tempco

On Drain Current

Forward Transconductance

Transconductance Mismatch

Output Conductance

Drain Source On Resistance

VGS(th)

VOS

-0.42 -0.40 -0.38 -0.44 -0.40 -0.36 V

2

5

7

20 mV

IDS =1µA

VDS = 0.1V

IDS =1µA

∆VOS

∆VGS(th)

IDS (ON)

GFS

∆GFS

GOS

RDS (ON)

5

-1.7

0.0

+1.6

12.0

3.0

1.4

1.8

68

500

5

µV/ °C VDS1 = VDS2

-1.7

mV/ °C ID = 1µA

0.0

ID = 20µA, VDS = 0.1V

+1.6

ID = 40µA

12.0

mA

VGS = +9.1V

3.0

VGS = +3.6V

VDS = +5V

1.4

mmho VGS =+3.6 V

VDS = +8.6V

1.8

%

68

µmho VGS =+3.6V

VDS = +8.6V

500

Ω

VDS = 0.1V

VGS = +3.6V

Drain Source On Resistance

RDS (ON)

5.4

Drain Source On Resistance

∆RDS (ON)

10

Tolerance

5.4

KΩ

VDS = 0.1V

VGS = +0.0V

10

%

Drain Source On Resistance

Mismatch

∆RDS (ON)

Drain Source Breakdown

BVDSX

10

Voltage

Drain Source Leakage Current1 IDS (OFF)

Gate Leakage Current1

IGSS

Input Capacitance

Transfer Reverse Capacitance

Turn-on Delay Time

Turn-off Delay Time

Crosstalk

CISS

CRSS

ton

toff

Notes: 1 Consists of junction leakage currents

ALD114804/ALD114804A/ALD114904/ALD114904A

0.5

10

100

4

3

30

1

2.5

0.1

10

10

60

0.5

10

10

3

2.5

0.1

10

10

60

%

V

100 pA

4 nA

30 pA

1 nA

pF

pF

ns

ns

dB

Advanced Linear Devices

IDS = 1.0µA

VGS = -1.4V

VGS = -1.4V, VDS =+5V

TA = 125°C

VDS = 0V VGS = +10V

TA =125°C

V+ = 5V RL= 5KΩ

V+ = 5V RL= 5KΩ

f = 100KHz

2

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