OMS425 데이터 시트보기 (PDF) - Omnirel Corp => IRF
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OMS425
Omnirel Corp => IRF
OMS425 Datasheet PDF : 4 Pages
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OMS425, OMS525, OMS625
ELECTRICAL CHARACTERISTICS: OMS525 (TC = 25° unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID = 250 µA, VGS = 0
V(BRDSS
250
Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat.
IDSS
-
VDS = Max. Rat. x 0.8, TC = 70°C
-
Gate-Body Leakage, VGS = ±12 V
IGSS
-
-
-
V
-
1.0
µA
-
100
µA
-
±500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS = VGS, ID = 250 µA
Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 10 A
Static Drain-Source On-Resistance TC = 70°C
On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10
VGS(th)
2.0
-
4.0
V
RDS(on)
-
-
0.11
-
-
0.19
ID(on)
20
-
-
A
DYNAMIC CHARACTERISTICS
Forward Transconductance VDS > ID(on) X RDS(on) Max., ID = 11.5 A
gfs
Input Capacitance
VDS = 25 V,
Ciss
Output Capacitance
VGS = 0,
Coss
Reverse Transfer Capacitance
f = 1.0 mHz
Crss
11
-
-
mho
-
-
4340
pF
-
-
810
pF
-
-
320
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time,
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
VDD = 125 V, ID = 20 A,
tr
RGS = 9.1 , VGS = 10 V
td(off)
tf
-
-
50
ns
-
-
250
ns
-
-
180
ns
-
-
200
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
Source - Drain Current (Pulsed)
Forward On-Voltage
Reverse Recovery Time
Reverse Recovered Charge
ISD = 20 A, VGS = 0
ISD = 20 A,
di/dt = 100 A/µSec
ISD
ISDM*
VSD
trr
Qrr
-
-
20
A
-
100
A
-
-
1.3
V
-
300
-
ns
-
3.5
-
µC
RESISTOR CHARACTERISTICS
Resistor Tolerance
Temperature Coefficient, -40°C to +70°C
RS
9.0
10
11
m
Tcr
-
100
-
ppm
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%.
2.1
2.1 - 63
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