datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

ADT7481ARMZ 데이터 시트보기 (PDF) - Analog Devices

부품명
상세내역
일치하는 목록
ADT7481ARMZ Datasheet PDF : 24 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
THEORY OF OPERATION
The ADT7481 is a local and dual remote temperature sensor
and over/under temperature alarm. When the ADT7481 is
operating normally, the on-board ADC operates in a free-
running mode. The analog input multiplexer alternately selects
either the on-chip temperature sensor to measure its local
temperature, or either of the remote temperature sensors. The
ADC digitizes these signals and the results are stored in the
local, Remote 1, and Remote 2 temperature value registers.
The local and remote measurement results are compared with
the corresponding high, low, and THERM temperature limits,
stored in on-chip registers. Out-of-limit comparisons generate
flags that are stored in the status register. A result that exceeds
the high temperature limit, the low temperature limit, or remote
diode open circuit will cause the ALERT output to assert low.
Exceeding THERM temperature limits causes the THERM
output to assert low. The ALERT output can be reprogrammed
as a second THERM output.
The limit registers can be programmed, and the device controlled
and configured via the serial SMBus. The contents of any register
can also be read back via the SMBus.
Control and configuration functions consist of switching the
device between normal operation and standby mode, selecting
the temperature measurement scale, masking or enabling the
ALERT output, switching Pin 8 between ALERT and THERM2,
and selecting the conversion rate.
TEMPERATURE MEASUREMENT METHOD
A simple method of measuring temperature is to exploit the
negative temperature coefficient of a diode, measuring the base-
emitter voltage (VBE) of a transistor operated at constant current.
ADT7481
This technique requires calibration to null the effect of the
absolute value of VBE, which varies from device to device.
The technique used in the ADT7481 measures the change in
VBE when the device is operated at two different currents.
Figure 15 shows the input signal conditioning used to measure
the output of a remote temperature sensor. This figure shows
the remote sensor as a substrate transistor, but it could equally
be a discrete transistor. If a discrete transistor is used, the
collector is not grounded and is linked to the base. To prevent
ground noise interfering with the measurement, the more
negative terminal of the sensor is not referenced to ground, but
is biased above ground by an internal diode at the D− input. C1
may optionally be added as a noise filter with a recommended
maximum value of 1,000 pF.
To measure ΔVBE, the operating current through the sensor is
switched among two related currents. The currents through the
temperature diode are switched between I, and N × I, giving
ΔVBE. The temperature can then be calculated using the ΔVBE
measurement.
The resulting ΔVBE waveforms pass through a 65 kHz low-pass
filter to remove noise and then to a chopper-stabilized amplifier.
This amplifies and rectifies the waveform to produce a dc
voltage proportional to ΔVBE. The ADC digitizes this voltage
producing a temperature measurement. To reduce the effects of
noise, digital filtering is performed by averaging the results of
16 measurement cycles for low conversion rates. At rates of 16,
32, and 64 conversions/second, no digital averaging takes place.
Signal conditioning and measurement of the local temperature
sensor is performed in the same manner.
VDD
I
N ×I
IBIAS
REMOTE
SENSING
TRANSISTOR
D+
C11
D–
BIAS
DIODE
LPF
fC = 65kHz
VOUT+
TO ADC
VOUT–
1CAPACITOR C1 IS OPTIONAL. IT IS ONLY NECESSARY IN NOISY ENVIRONMENTS. C1 = 1000pF MAX.
Figure 15. Input Signal Conditioning
Rev. 0 | Page 9 of 24

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]