ADP3412JR 데이터 시트보기 (PDF) - Analog Devices

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ADP3412JR

Dual MOSFET Driver with Bootstrapping

Analog Devices 

Pin Mnemonic

1

BST

2

IN

3

DLY

4

VCC

5

DRVL

6

PGND

7

SW

8

DRVH

ADP3412

PIN FUNCTION DESCRIPTIONS

Function

Floating Bootstrap Supply for the Upper MOSFET. A capacitor connected between BST and SW Pins

holds this bootstrapped voltage for the high side MOSFET as it is switched. The capacitor should be

chosen between 100 nF and 1 ␮F.

TTL-level input signal that has primary control of the drive outputs.

Low High Transition Delay. A capacitor from this pin to ground programs the propagation delay from

turn-off of the lower FET to turn-on of the upper FET. The formula for the low high transition delay

is DLY = CDLY × (1 ns/pF) + 20 ns. The rise time for turn-on of the upper FET is not included in the formula.

Input Supply. This pin should be bypassed to PGND with ~1 µF ceramic capacitor.

Synchronous Rectifier Drive. Output drive for the lower (synchronous rectifier) MOSFET.

Power Ground. Should be closely connected to the source of the lower MOSFET.

This pin is connected to the buck-switching node, close to the upper MOSFET’s source. It is the floating

return for the upper MOSFET drive signal. It is also used to monitor the switched voltage to prevent turn-

on of the lower MOSFET until the voltage is below ~1 V. Thus, according to operating conditions, the

high low transition delay is determined at this pin.

Buck Drive. Output drive for the upper (buck) MOSFET.

PIN CONFIGURATION

BST 1

8 DRVH

IN 2 ADP3412 7 SW

TOP VIEW

DLY 3 (Not to Scale) 6 PGND

VCC 4

5 DRVL

Model

ADP3412JR

Temperature Range

0°C to 70°C

ORDERING GUIDE

Package Description

8-Lead Standard Small Outline Package (SOIC)

Package Option

SOIC-8

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection. Although

the ADP3412 features proprietary ESD protection circuitry, permanent damage may occur on

devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are

recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. A

–3–

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