ADG438 데이터 시트보기 (PDF) - Analog Devices
부품명
상세내역
일치하는 목록
ADG438 Datasheet PDF : 8 Pages
| |||
ADG438F/ADG439F–SPECIFICATIONS1
Dual Supply (VDD = +15 V, VSS = –15 V, GND = 0 V, unless otherwise noted)
Parameter
+25؇C
B Version
–40؇C to
+85؇C
–40؇C to
+105؇C
Units
ANALOG SWITCH
Analog Signal Range
RON
∆RON
RON Drift
RON Match
VSS + 1.2
VDD – 0.8
400
VSS + 1.2
VDD – 0.8
400
V min
V max
Ω max
5
5
% max
0.6
%/°C typ
3
3
3
% max
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
ADG438F
ADG439F
Channel ON Leakage ID, IS (ON)
ADG438F
ADG439F
± 0.01
± 0.5
±2
± 0.01
± 0.5
±5
± 0.5
±5
± 0.01
± 0.5
±5
± 0.5
±5
nA typ
±5
nA max
nA typ
± 30
nA max
± 15
nA max
nA typ
± 30
nA max
± 15
nA max
FAULT
Output Leakage Current
(With Overvoltage)
Input Leakage Current
(With Overvoltage)
Input Leakage Current
(With Power Supplies OFF)
± 0.02
± 0.1
±2
± 0.005
± 0.1
±1
± 0.001
± 0.1
±1
nA typ
± 10
µA max
µA typ
±2
µA max
µA typ
±4
µA max
DIGITAL INPUTS
Input High Voltage, VINH
2.4
Input Low Voltage, VINL
0.8
Input Current
IINL or IINH
±1
CIN, Digital Input Capacitance
5
DYNAMIC CHARACTERISTICS2
tTRANSITION
170
220
300
tOPEN
10
10
2.4
V min
0.8
V max
±1
µA max
pF typ
ns typ
320
ns max
10
ns min
tON (EN)
tOFF (EN)
tSETT, Settling Time
0.1%
0.01%
Charge Injection
OFF Isolation
200
250
300
110
150
180
0.5
1.7
4
80
ns typ
300
ns max
ns typ
180
ns max
0.5
µs typ
1.7
µs typ
pC typ
dB typ
Channel-to-Channel Crosstalk
85
dB typ
CS (OFF)
CD (OFF)
ADG438F
ADG439F
POWER REQUIREMENTS
IDD
ISS
5
50
25
0.05
0.15
0.25
0.01
0.02
0.04
NOTES
1Temperature range is as follows: B Version: –40°C to +105°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
pF typ
pF typ
pF typ
mA typ
0.25
mA max
mA typ
0.04
mA max
Test Conditions/Comments
–10 V < VS < +10 V, IS = 1 mA;
–5 V < VS < +5 V, IS = 1 mA;
VS = 0 V, IS = 1 mA
VS = ± 10 V, IS = 1 mA
VD = ± 10 V, VS = ϯ10 V;
Test Circuit 2
VD = ± 10 V, VS = ϯ10 V;
Test Circuit 3
VS = VD = ± 10 V;
Test Circuit 4
VS = –33 V, +33 V or +50 V, VD = 0 V, Test Circuit 3
VS = ± 25 V, VD = ϯ10 V, Test Circuit 5
VS = ± 25 V, VD = VEN = A0, A1, A2 = 0 V
Test Circuit 6
VIN = 0 or VDD
RL = 1 MΩ, CL = 35 pF;
VS1 = ± 10 V, VS8 = ϯ10 V; Test Circuit 7
RL = 1 kΩ, CL = 35 pF;
VS = +5 V; Test Circuit 8
RL = 1 kΩ, CL = 35 pF;
VS = +5 V; Test Circuit 9
RL = 1 kΩ, CL = 35 pF;
VS = +5 V; Test Circuit 9
RL = 1 kΩ, CL = 35 pF;
VS = +5 V
VS = 0 V, RS = 0 Ω, CL= 1 nF; Test Circuit 10
RL = 1 kΩ, CL = 15 pF, f = 100 kHz;
VS = 7 V rms; Test Circuit 11
RL = 1 kΩ, CL = 15 pF, f = 100 kHz;
VS = 7 V rms; Test Circuit 12
VIN = 0 V or 5 V
–2–
REV. D
Share Link: 