P4C198 데이터 시트보기 (PDF) - Performance Semiconductor
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P4C198 Datasheet PDF : 13 Pages
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P4C198/198L, P4C198A/198AL
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym. Parameter
-10
-12
-15
-20
-25
-35
-45
Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tWC Write Cycle Time 10
12
13
15
20
30
40
ns
tCW Chip Enable Time 7
to End of Write
8
10
15
20
30
35
ns
tAW Address Valid to 8
End of Write
8
10
15
20
25
35
ns
tAS Address Set-up
0
0
0
0
0
0
0
ns
Time
tWP Write Pulse
8
Width
9
10
12
20
25
35
ns
tAH Address Hold
0
0
0
0
0
0
0
ns
Time from End
of Write
tDW Data Valid to End 7
6
7
10
13
15
20
ns
of Write
tDH Data Hold Time
0
0
0
0
0
0
0
ns
tWZ Write Enable to
7
6
7
8
10
10
15 ns
Output in High Z
tOW Output Active
3
3
3
3
3
3
3
ns
from End of Write
WRITE CYCLE NO. 1 (With OE high)
Document # SRAM113 REV A
Page 6 of 13
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