AD812ARZ 데이터 시트보기 (PDF) - Analog Devices

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AD812ARZ

Dual, Current Feedback Low Power Op Amp

Analog Devices 

ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V

Internal Power Dissipation2

Plastic (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts

Small Outline (R) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9 Watts

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 1.2 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range N, R . . . . . . . . . –65°C to +125°C

Operating Temperature Range . . . . . . . . . . . . –40°C to +85°C

Lead Temperature Range (Soldering, 10 sec) . . . . . . . +300°C

NOTES

1Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the

device at these or any other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

2Specification is for device in free air: 8-lead plastic package: θJA = 90°C/Watt;

8-lead SOIC package: θJA = 150°C/Watt.

ORDERING GUIDE

Model

Temperature

Range

Package

Description

Package

Option

AD812AN

–40°C to +85°C

AD812AR

–40°C to +85°C

AD812AR-REEL

AD812AR-REEL7

8-Lead Plastic DIP N-8

8-Lead Plastic SOIC SO-8

13" Reel

7" Reel

AD812

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the

AD812 is limited by the associated rise in junction temperature.

The maximum safe junction temperature for the plastic encap-

sulated parts is determined by the glass transition temperature

of the plastic, about 150°C. Exceeding this limit temporarily

may cause a shift in parametric performance due to a change in

the stresses exerted on the die by the package. Exceeding a

junction temperature of 175°C for an extended period can result

in device failure.

While the AD812 is internally short circuit protected, this may

not be sufficient to guarantee that the maximum junction tem-

perature (150 degrees) is not exceeded under all conditions. To

ensure proper operation, it is important to observe the derating

curves.

It must also be noted that in high (noninverting) gain configura-

tions (with low values of gain resistor), a high level of input

overdrive can result in a large input error current, which may

result in a significant power dissipation in the input stage. This

power must be included when computing the junction tempera-

ture rise due to total internal power.

2.0

TJ = +150؇C

8-LEAD MINI-DIP PACKAGE

1.5

METALIZATION PHOTO

Dimensions shown in inches and (mm).

0.0783

(1.99)

V+

OUT2

–IN2

8

7

6

5 +IN2

0.0539

(1.37)

1.0

8-LEAD SOIC PACKAGE

0.5

0

–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90

AMBIENT TEMPERATURE – ؇C

Figure 3. Plot of Maximum Power Dissipation vs.

Temperature

4 V–

1

OUT1

2

3

4

–IN1

+IN1

V–

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the AD812 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. B

–5–

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