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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

ACST12 데이터 시트보기 (PDF) - STMicroelectronics

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ACST12
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ACST12 Datasheet PDF : 12 Pages
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Characteristics
1
Characteristics
ACST12
Table 2.
Symbol
Absolute ratings (limiting values)
Parameter
Value
Unit
IT(RMS) On-state rms current full sine wave
TO-220AB
D²PAK Tc = 104 °C
12
D²PAK
with 1cm² of Cu
Tamb = 47 °C
2
ITSM
Non repetitive surge peak on-state current
Tj initial = 25 °C,( full cycle sine wave)
I2t I2t for fuse selection
F = 60 Hz tp = 16.7 ms
126
F = 50 Hz tp = 20.0 ms
120
tp = 10 ms
95
dI/dt
VPP
Critical rate of rise on-state current
IG = 2 x IGT, (tr 100 ns)
Non repetitive line peak pulse voltage (1)
F = 120 Hz Tj = 125 °C
100
Tj = 125 °C
2
PG(AV) Average gate power dissipation
Tj = 125 °C
0.1
PGM Peak gate power dissipation (tp = 20 µs)
Tj = 125 °C
10
IGM Peak gate current (tp = 20 µs)
Tj = 125 °C
1
Tstg Storage temperature range
- 40 to + 150
Tj Operating junction temperature range
- 40 to + 125
1. According to test described in IEC 61000-4-5 standard and Figure 19
A
A
A
A2s
A/µs
kV
W
W
A
°C
°C
Table 3. Electrical characteristics
Symbol
Test conditions
Quadrant
Tj
IGT(1) VOUT = 12 V, RL = 33 Ω I - II - III
VGT VOUT = 12 V, RL = 33 Ω I - II - III
VGD
IH(2)
VOUT = VDRM, RL = 3.3 Ω I - II - III
IOUT = 500 mA
IL
IG = 1.2 x IGT
I - II - III
dV/dt(2) VOUT = 67% VDRM, gate open
(dV/dt)c = 15 V/µs
(dI/dt)c(2)
Without snubber
VCL ICL = 0.1 mA, tp = 1 ms
1. Minimum IGT is guaranteed at 5% of IGT max
2. For both polarities of OUT pin referenced to COM pin
25 °C
25 °C
125 °C
25 °C
25 °C
125 °C
125 °C
25 °C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
MIN.
Value
Unit
ACST12-7Sx ACST12-7Cx Unit
10
35
1.0
0.2
30
50
50
70
200
2000
5.3
14
850
mA
V
V
mA
mA
V/µs
A/ms
V
2/12

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