5962F9763901VEC 데이터 시트보기 (PDF) - Intersil
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5962F9763901VEC Datasheet PDF : 2 Pages
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ACS139MS
Die Characteristics
DIE DIMENSIONS:
Size: 2390µm x 2390µm (94 mils x 94 mils)
Thickness: 525µm ±25µm (20.6 mils ±1 mil)
Bond Pad: 110µm x 110µm (4.3 mils x 4.3 mils)
METALLIZATION:
Type: Al
Metal 1 Thickness: 0.7µm ±0.1µm
Metal 2 Thickness: 1.0µm ±0.1µm
SUBSTRATE:
Silicon on Sapphire (SOS)
Metallization Mask Layout
1A 0
SUBSTRATE POTENTIAL:
Unbiased Insulator
BACKSIDE FINISH:
Sapphire
PASSIVATION
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm ±0.15µm
SPECIAL INSTRUCTIONS:
Bond VCC First
ADDITIONAL INFORMATION:
Worst Case Density: <2.0 x 105 A/cm2
Transistor Count: 190
ACS139MS.
1E
VCC
2E
1A1
2A0
1Y0
2A1
1Y1
2Y0
1Y2
2Y1
1Y3 GND
2Y3
2Y2
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