RMWL26001 데이터 시트보기 (PDF) - Raytheon Company
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RMWL26001 Datasheet PDF : 7 Pages
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RMWL26001
21-26.5 GHz Low Noise Amplifier MMIC
PRODUCT INFORMATION
Description
The RMWL26001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 26.5 GHz Low Noise Amplifier for use in
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 26 GHz
transmit/receive chipset. The RMWL26001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of low noise amplifier applications.
Features
4 mil substrate
Small-signal gain 21 dB (typ.)
2.9 dB noise figure (typ.)
Chip size 3.0 mm x 1.25 mm
Absolute
Maximum
Ratings
Parameter
Positive DC voltage (+4V Typical)
Negative DC voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
ID
PIN
TC
Tstg
Rjc
Value
+6
-2
8
100
+8
-30 to +85
-55 to +125
170
Unit
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Parameter
Min Typ
Characteristics Frequency Range
21
(At 25°C 50Ω Gate Supply Voltage1 (Vg)
-0.5
system, Vd=+4V,
Quiescent current
Gain at Pin=-15
dBm (21-24 GHz)
20 22
(Idg)=65 mA Gain at Pin=-15
dBm (21-26.5 GHz)
20 21
Gain Variation vs
Freq. (21-26.5 GHz)
2.8
Gain at 1dB Compression
(21-26.5 GHz)
20
Power Output at
1dB Compression
10
Max Unit
26.5 GHz
V
26 dB
26 dB
dB
dB
dBm
Parameter
Drain Current at
Pin=-15 dBm
Drain Current at
1dB Compression
Input Return Loss
(Pin=-15 dBm)
Output Return Loss
(Pin=-15 dBm)
Noise Figure
OIP3
Min Typ
65
80
12
12
2.9
22
Max Unit
mA
mA
dB
dB
4.0 dB
dBm
www.raytheon.com/micro
Note:
1. Typical range of negative gate voltage is -0.8 to -0.2 V to set typical Idq of 65 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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