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MM908E625ACDWB 데이터 시트보기 (PDF) - Freescale Semiconductor

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MM908E625ACDWB Datasheet PDF : 48 Pages
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ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
All characteristics are for the analog chip only. Please refer to the specification for 68HC908EY16 for characteristics of the
microcontroller chip. Characteristics noted under conditions 9.0 V VSUP 16 V, -40°C TJ 125°C unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN PHYSICAL LAYER
Propagation Delay (12), (13)
TXD LOW to LIN LOW
TXD HIGH to LIN HIGH
LIN LOW to RXD LOW
LIN HIGH to RXD HIGH
TXD Symmetry
RXD Symmetry
Output Falling Edge Slew Rate (12), (14)
80% to 20%
Output Rising Edge Slew Rate (12), (14)
20% to 80%, RBUS > 1.0 k, CBUS < 10 nF
LIN Rise/Fall Slew Rate Symmetry (12), (14)
µs
t TXD-LIN-low
6.0
t TXD-LIN-high
6.0
t LIN-RXD-low
4.0
8.0
t LIN-RXD-
4.0
8.0
high
- 2.0
2.0
t TXD-SYM
- 2.0
2.0
t RXD-SYM
SRF
V/µs
-1.0
- 2.0
- 3.0
SRR
V/µs
1.0
2.0
3.0
SRS
- 2.0
2.0
µs
HALL-EFFECT SENSOR INPUTS (H1:H3)
Propagation Delay
t HPPD
1.0
µs
AUTONOMOUS WATCHDOG (AWD)
AWD Oscillator Period
AWD Period Low = 512 tOSC
AWD Period High = 256 tOSC
AWD Cyclic Wake-Up On Time
t OSC
40
µs
t AWDPH
16
22
28
ms
t AWDPL
8.0
11
14
ms
t AWDHPON
90
µs
Notes
12. All LIN characteristics are for initial LIN slew rate selection (20 kBaud) (SRS0:SRS1= 00).
13. See Figure 2.
14. See Figure 3.
MICROCONTROLLER PARAMETRICS
Table 5. Microcontroller Description
For a detailed microcontroller description, refer to the MC68HC908EY16 data sheet.
Module
Description
Core
High-Performance HC08 Core with a Maximum Internal Bus Frequency of 8.0 MHz
Timer
Two 16-Bit Timers with Two Channels (TIM A and TIM B)
Flash
16 K Bytes
RAM
512 Bytes
ADC
10-Bit Analog-to-Digital Converter
SPI
SPI Module
908E625
10
Analog Integrated Circuit Device Data
Freescale Semiconductor

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