PJP168A
PNP Epitaxial Silicon DarlingtonTransistor
MEDIUM PO WER LINEAR SWITCHING APPLICATIO NS
• Collector current 18A
• Collector dissipation Pc =100W (Tc = 25℃ )
ORDERING INFORMATION
Device
PJP168ACZ
Operating Temperature
-20℃~+85℃
Package
T O-220
TO-220
P in : 1. Base
2. Collector
3. Emitter
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
T stg
ELECTRICAL CHARACTERISTICS (Ta = 25℃)
Characteristic
Collector-Base Breakdown Voltage
Collector-EmitterBreakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE (SAT)
VBE (SAT)
Rating
Unit
-20
V
-13
V
-7
V
-18
A
100
W
150
℃
-55 ~150
℃
Test Condition Min Typ Max Unit
Ic = -1mA, IE = 0
-20
V
Ic = -10mA, IB =0 -13
V
IE = -1mA, IC = 0
-7
V
VCB= -15V,IE=0
-100 μA
VEB= -3V,IC=0
-100 μA
VCE= -3V,IC=-10A 120
VCE= -3V,IC = -
90
15A
IC= -10A,IB= -1A
-0.7
V
IC= -10A, VCE= -
-1.5
V
4V
1-3
2002/01.rev.A