PJP110A(2002) 데이터 시트보기 (PDF) - Promax Johnton

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PJP110A
(Rev.:2002)

PNP Epitaxial Silicon DarlingtonTransistor

Promax Johnton 

PJP110A

PNP Epitaxial Silicon DarlingtonTransistor

MEDIUM PO WER LINEAR SWITCHING APPLICATIO NS

• Collector current 10A

• Collector dissipation Pc =75W (Tc = 25℃)

ORDERING INFORMATION

Device

Operating Temperature

PJP110ACZ

-20℃～+85℃

Package

T O-220

T O-220

Pin : 1. Base

2. Collector

3. Emitter

ABSOLUTE MAXIMUM RATINGS (T a = 25℃)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

ELECTRICAL CHARACTERISTICS (T a = 25℃)

Symbol

VCBO

VCEO

VEBO

Ic

Pc

Tj

T stg

Characteristic

Collector-Base Breakdown Voltage

Collector-EmitterBreakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

VCE (SAT)

VBE (SAT)

Test Condition

Ic = -1mA, IE = 0

Ic = -10mA, IB =0

IE = -1mA, IC = 0

VCB= -15V,IE=0

VEB= -3V,IC=0

VCE= -3V,IC=-6A

VCE= -3V,IC = -10A

IC= -6A,IB= -600mA

IC= -6A, VCE= -4V

Rating

Unit

-20

V

-12

V

-7

V

-10

A

75

W

150

℃

-55 ~150

℃

Min Typ Max Unit

-20

V

-12

V

-7

V

-100

µA

-100

µA

110

90

-0.5

V

-1.5

V

1-3

2002/01.rev.A

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