8550S 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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8550S Datasheet PDF : 3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8550S TRANSISTOR（ PNP ）
FEATURE
Power dissipation
PCM : 0.625 W（Tamb=25℃）
Collector current
ICM : -0.5 A
Collector-base voltage
V(BR)CBO : -40 V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
TO— 92
1.EMITTER
2. COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -100μＡ , IE=0
-40
Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1 mA， IB=0
-25
Emitter-base breakdown voltage
V(BR)EBO
IE= -100μA， IC=0
-5
Collector cut-off current
ICBO
VCB= -40 V , IE=0
Collector cut-off current
Emitter cut-off current
ICEO
VCE= -20 V , IB=0
IEBO
VEB= - 3 V， IC=0
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
DC current gain
hFE（1）
VCE= -1 V, IC= -50m A
85
300
hFE（2）
VCE= -1 V, IC= -500m A
50
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB=-50 mA
-0.6 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=-500mA, IB=-50 mA
VCE=- 6 V, IC=-20mA
150
f =30MHz
-1.2 V
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
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