7MBR100SD060 데이터 시트보기 (PDF) - Fuji Electric
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7MBR100SD060
Fuji Electric
7MBR100SD060 Datasheet PDF : 7 Pages
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IGBT Module
7MBR100SD060
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
B value
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
IDM
IRRM
IGT
VGT
VTM
VFM
IRRM
R
B
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=100mA
VGE=15V, Ic=100A chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=300V
IC=100A
VGE=±15V
RG=24Ω
IF=100A
chip
terminal
IF=100A
VCES=600V, VGE=0V
VCE=0V, VGE=±20V
IC=50A, VGE=15V chip
terminal
VCC=300V
IC=50A
VGE=±15V
RG=51Ω
VR=600V
VDM=800V
VRM=800V
VD=6V, IT=1A
VD=6V, IT=1A
ITM=100A
chip
terminal
IF=100A
chip
terminal
VR=800V
T=25°C
T=100°C
T=25/50°C
Characteristics
Min.
Typ.
Max.
250
200
5.5
7.8
8.5
1.8
2.15
2.6
10000
0.45
1.2
0.25
0.6
0.40
1.0
0.05
0.35
1.6
1.95
2.7
300
250
200
1.8
2.05
2.6
0.45
1.2
0.25
0.6
0.40
1.0
0.05
0.35
250
1.0
1.0
100
2.5
1.0
1.15
1.15
1.1
1.2
1.5
250
5000
465
495
520
3305
3375
3450
Unit
µA
nA
V
V
pF
µs
V
ns
µA
nA
V
µs
µA
mA
mA
mA
V
V
V
µA
Ω
K
Thermal resistance Characteristics
Item
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Min.
Characteristics
Typ.
Max.
0.05
0.31
0.70
0.63
0.35
0.47
Unit
°C/W
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