7MBR35SD120 데이터 시트보기 (PDF) - Fuji Electric
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7MBR35SD120 Datasheet PDF : 7 Pages
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IGBT Module
7MBR35SD120
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
60
VGE= 20V 15V 12V
50
40
10V
30
20
10
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
60
Tj= 25°C
Tj= 125°C
50
40
30
20
10
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
10000
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
0
Coes
Cres
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
60
VGE= 20V 15V 12V
50
40
10V
30
20
10
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
10
8
6
4
2
0
5
1000
Ic= 50A
Ic= 25A
Ic= 12.5A
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=25A, Tj= 25°C
25
800
20
600
15
400
10
200
5
0
0
0
50
100
150
200
250
Gate charge : Qg [ nC ]
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