74HC3G04GD 데이터 시트보기 (PDF) - NXP Semiconductors.
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74HC3G04GD Datasheet PDF : 13 Pages
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NXP Semiconductors
74HC3G04; 74HCT3G04
Inverter
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); all typical values are measured at Tamb = 25 °C; for test circuit see Figure 7.
Symbol Parameter Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min
Max
74HCT3G04
tpd
propagation nA to nY; see Figure 6 [1]
delay
VCC = 4.5 V
-
10 18
-
23
-
tt
transition VCC = 4.5 V; see Figure 6 [2] -
6
15
-
19
-
time
29 ns
22 ns
CPD
power
VI = GND to VCC − 1.5 V [3] -
9
-
-
-
-
dissipation
capacitance
-
pF
[1] tpd is the same as tPLH and tPHL.
[2] tt is the same as tTLH and tTHL.
[3] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of outputs.
12. Waveforms
VI
nA input
GND
VOH
nY output
VOL
VM
t PHL
VM
t THL
VM
VM
10 %
t PLH
90 %
t TLH
mna722
Fig 6.
Measurement points are given in Table 9.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
The data input (nA) to output (nY) propagation delays
Table 9. Measurement points
Type
74HC3G04
74HCT3G04
Input
VM
0.5 × VCC
1.3 V
Output
VM
0.5 × VCC
1.3 V
74HC_HCT3G04_3
Product data sheet
Rev. 03 — 2 July 2008
© NXP B.V. 2008. All rights reserved.
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