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74HC03

Quad 2-input NAND gate

Philips Electronics 

Philips Semiconductors

Quad 2-input NAND gate

Product specification

74HC/HCT03

DC CHARACTERISTICS FOR 74HCT

For the DC characteristics see “74HC/HCT/HCU/HCMOS Logic Family Specifications”, except that the VOH values are

not valid for open drain. They are replaced by IOZ as given below.

Output capability: standard (open drain), excepting VOH

ICC category: SSI

Voltages are referenced to GND (ground = 0 V)

SYMBOL PARAMETER

Tamb (°C)

74HCT

+25

−40 to +85

min. typ. max. min. max.

IOZ

HIGH level output

leakage current

0.5

5.0

TEST CONDITIONS

−40 to +125

UNIT

VCC

(V)

VI

min. max.

OTHER

10.0 µA

4.5

to

5.5

VIL

VO = VO(max)(1)

or GND

Note

1. The maximum operating output voltage (VO(max)) is 6.0 V.

Note to HCT types

The value of additional quiescent supply current (∆ICC) for a unit load of 1 is given in the family specifications.

To determine ∆ICC per input, multiply this value by the unit load coefficient shown in the table below.

INPUT

nA, nB

UNIT LOAD COEFFICIENT

1.0

AC CHARACTERISTICS FOR 74HCT

GND = 0 V; tr = tf = 6 ns; CL = 50 pF

Tamb (°C)

SYMBOL PARAMETER

74HCT

+25

−40 to +85 −40 to +125

min. typ. max. min. max. min. max.

tPZL/ tPLZ propagation delay

nA, nB, to nY

12 24

30

36

tTHL

output transition time

7 15

19

22

UNIT

ns

ns

TEST CONDITIONS

VCC WAVEFORMS

(V)

4.5 Fig.6

4.5 Fig.6

December 1990

6

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