COM450A 데이터 시트보기 (PDF) - Omnirel Corp => IRF
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COM450A Datasheet PDF : 4 Pages
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ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N COM350A
Parameter
Min. Typ. Max. Units Test Conditions
B VDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IG S S R
ID S S
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
400
V VG S = 0,
ID = 250 mA
2.0
4.0 V VD S = VG S,ID = 250 mA
100 nA VG S = +20 V
- 100 nA VG S = - 20 V
0.1 0.25 m A VDS = Max. Rat., VG S = 0
0.2 1.0 m A VDS = 0.8 Max. Rat., VG S = 0,
TC = 125° C
15
A VD S 2 VDS(on),VG S = 10 V
2.0 2.64 V VG S = 10 V, ID = 8.0 A
R DS(on) Static Drain-Source On-State
Resistance1
0.25 .32
VG S = 10 V, ID = 8.0 A
R DS(on) Static Drain-Source On-State
Resistance1
0.51 0.67
VG S = 10 V, ID = 8.0 A,
TC = 125 C
DYNAMIC
gfs
Forward Transductance1
C iss Input Capacitance
C oss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr
Rise Time
td(off) Turn-Off Delay Time
tf
Fall Time
6.0
2900
450
150
30
40
80
30
S(W ) VD S 2 VDS(on),ID = 8.0 A
pF VG S = 0
pF VD S = 25 V
pF f = 1 MHz
ns VD D = 200 V, ID @ 8.0 A
ns Rg =5.0 W ,VG S =10V
ns (MOSFET switching times are
essentially independent of
ns operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
(Body Diode)
IS M Source Current1
(Body Diode)
VSD Diode Forward Voltage1
tr
Reverse Recovery Time
Modified MOSPOWER D
- 15 A
symbol showing
G
the integral P-N
- 60 A
Junction rectifier.
S
-1.6 V TC = 25 C,IS = -15 A, VG S = 0
600
ns TJ = 100 C,IF =IS,
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N COM450A
Parameter
Min. Typ. Max. Units Test Conditions
B VDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IG S S R
ID S S
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
500
V VG S = 0,
ID = 250 mA
2.0
4.0 V VD S = VG S,ID = 250 mA
100 nA VG S = +20 V
- 100 nA VG S = - 20 V
0.1 0.25 m A VDS = Max. Rat., VG S = 0
0.2 1.0 m A VDS = 0.8 Max. Rat., VG S = 0,
TC = 125° C
13
A VD S 2 VDS(on),VG S = 10 V
2.1 2.94 V VG S = 10 V, ID = 7.0 A
R DS(on) Static Drain-Source On-State
Resistance1
0.3 0.42
VG S = 10 V, ID = 7.0 A
R DS(on) Static Drain-Source On-State
Resistance1
0.67 0.89
VG S = 10 V, ID = 7.0 A,
TC = 125 C
DYNAMIC
gfs
Forward Transductance1
C iss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr
Rise Time
td(off) Turn-Off Delay Time
tf
Fall Time
6.0
2600
280
40
30
46
75
31
S(W ) VD S 2 VDS(on),ID = 7.0 A
pF VG S = 0
pF VD S = 25 V
pF f = 1 MHz
ns VD D = 210 V, ID @ 7.0 A
ns Rg = 5.0 W ,VG S = 10 V
ns (MOSFET switching times are
essentially independent of
ns operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
(Body Diode)
IS M Source Current1
(Body Diode)
VSD Diode Forward Voltage1
tr
Reverse Recovery Time
Modified MOSPOWER D
- 13 A
symbol showing
G
the integral P-N
- 52 A
Junction rectifier.
S
-1.4 V TC = 25 C,IS = -13 A, VG S = 0
700
ns TJ = 150 C,IF =IS,
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
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