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74AHC1G09 Datasheet PDF : 11 Pages
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Philips Semiconductors
74AHC1G09
2-input AND gate with open-drain output
12. Dynamic characteristics
Table 9: Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); tr = tf ≤ 3.0 ns; see Figure 6.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 25 °C
tPZL, tPLZ propagation delay see Figure 5
A and B to Y
VCC = 3.0 V to 3.6 V; CL = 15 pF
[1] -
VCC = 4.5 V to 5.5 V; CL = 15 pF
[1] -
VCC = 3.0 V to 3.6 V; CL = 50 pF
[1] -
VCC = 4.5 V to 5.5 V; CL = 50 pF
[1] -
CPD
power dissipation CL = 50 pF; fi = 1 MHz;
[2] -
capacitance
VI = GND to VCC
Tamb = −40 °C to +85 °C
4.6
7.5
ns
3.2
5.5
ns
6.5
11.0
ns
4.6
7.5
ns
5
-
pF
tPZL, tPLZ propagation delay see Figure 5
A and B to Y
VCC = 3.0 V to 3.6 V; CL = 15 pF
1.0
-
8.5
ns
VCC = 4.5 V to 5.5 V; CL = 15 pF
1.0
-
6.5
ns
VCC = 3.0 V to 3.6 V; CL = 50 pF
1.5
-
12.0
ns
Tamb = −40 °C to +125 °C
VCC = 4.5 V to 5.5 V; CL = 50 pF
1.5
-
8.0
ns
tPZL, tPLZ
propagation delay
A and B to Y
see Figure 5
VCC = 3.0 V to 3.6 V; CL = 15 pF
VCC = 4.5 V to 5.5 V; CL = 15 pF
1.0
-
1.0
-
9.0
ns
7.0
ns
VCC = 3.0 V to 3.6 V; CL = 50 pF
1.5
-
12.5
ns
VCC = 4.5 V to 5.5 V; CL = 50 pF
1.5
-
8.5
ns
[1] All typical values are measured at nominal VCC.
[2] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = number of inputs switching;
(CL × VCC2 × fo) = dissipation due to the output if the combination of the pull up voltage and resistance results in VCC at the output.
74AHC1G09_1
Product data sheet
Rev. 01 — 26 September 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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