BT169D,116 데이터 시트보기 (PDF) - NXP Semiconductors.
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BT169D,116 Datasheet PDF : 13 Pages
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NXP Semiconductors
6. Characteristics
Table 5. Characteristics
Tj = 25 C unless otherwise stated.
Symbol Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID, IR
off-state leakage
current
Dynamic characteristics
dVD/dt
critical rate of rise of
off-state voltage
tgt
gate controlled
turn-on time
tq
circuit commuted
turn-off time
Conditions
VD = 12 V; IT = 10 mA;
gate open circuit; see Figure 8
VD = 12 V; IGT = 0.5 mA;
RGK = 1 k; see Figure 10
VD = 12 V; IGT = 0.5 mA;
RGK = 1 k; see Figure 11
IT = 1.2 A
IT = 10 mA; gate open circuit;
see Figure 7
VD = 12 V
VD = VDRM(max); Tj = 125 C
VD = VDRM(max); VR = VRRM(max);
Tj = 125 C; RGK = 1 k
VDM = 67 % VDRM(max); Tj = 125 C;
exponential waveform;
see Figure 12
RGK = 1 k
gate open circuit
ITM = 2 A; VD = VDRM(max);
IG = 10 mA; dIG/dt = 0.1 A/s
VD = 67 % VDRM(max); Tj = 125 C;
ITM = 1.6 A; VR = 35 V;
dITM/dt = 30 A/s; dVD/dt = 2 V/s;
RGK = 1 k
BT169 series
Thyristor logic level
Min
Typ
Max
Unit
-
50
200
A
-
2
6
mA
-
2
5
mA
-
1.25
1.7
V
-
0.5
0.8
V
0.2
0.3
-
V
-
0.05
0.1
mA
500
800
-
-
25
-
-
2
-
-
100
-
V/s
V/s
s
s
BT169_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 30 September 2011
© NXP B.V. 2011. All rights reserved.
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