BT169D,126 데이터 시트보기 (PDF) - NXP Semiconductors.
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BT169D,126 Datasheet PDF : 13 Pages
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NXP Semiconductors
BT169 series
Thyristor logic level
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
BT169B
-
plastic single-ended leaded (through hole) package; 3 leads
BT169D
BT169G
4. Limiting values
Version
SOT54
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM, VRRM
repetitive peak off-state voltages
BT169B
BT169D
BT169G
IT(AV)
average on-state current
half sine wave;
Tlead 83 C;
see Figure 1
IT(RMS)
RMS on-state current
all conduction angles;
see Figure 4 and 5
ITSM
non-repetitive peak on-state current half sine wave;
Tj = 25 C prior to
surge;
see Figure 2 and 3
t = 10 ms
t = 8.3 ms
I2t
I2t for fusing
t = 10 ms
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
ITM = 2 A; IG = 10 mA;
dIG/dt = 100 mA/s
over any 20 ms period
Min
[1] -
[1] -
[1] -
-
-
-
-
-
-
-
-
-
-
-
40
-
Max
Unit
200
V
400
V
600
V
0.5
A
0.8
A
8
9
0.32
50
1
5
5
2
0.1
+150
125
A
A
A2s
A/s
A
V
V
W
W
C
C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/s.
BT169_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 30 September 2011
© NXP B.V. 2011. All rights reserved.
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