HS-0546RH, HS-0547RH
Die Characteristics
DIE DIMENSIONS:
83.9 mils x 159 mils x 19 mils
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 7kÅ ±0.7kÅ
Top Metallization:
Type: Al
Thickness: 16kÅ ±2kÅ
Substrate:
CMOS, DI
Metallization Mask Layout
HS-0546RH
EN
A0
A1 A2
A3 VREF
GND
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
1.4 x 105 A/cm2
Transistor Count:
HS-0546 - 485
HS-0547 - 485
HS-0547RH
EN
A0
A1 A2
NC VREF
GND
IN 1
IN 9
IN 1A
IN 1B
IN 2
IN 10
IN 2A
IN 2B
IN 3
IN 11
IN 3A
IN 3B
IN 4
IN 12
IN 4A
IN 4B
IN 5
IN 13
IN 5A
IN 5B
IN 6
IN 14
IN 6A
IN 6B
IN 7
IN 15
IN 7A
IN 7B
IN 8
IN 16
IN 8A
IN 8B
-V
OUT
+V
NC
-V
OUT A
+V
OUT B
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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