STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 4.75 V ≤ VIO ≤ 5.25 V, 13 V ≤ VB+ ≤ 32 V, and 0°C ≤ TJ ≤ 105°C unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
MODE TERMINALS OPERATING VOLTAGES
Mode Control Terminals Low Voltage
Mode Control Terminals High Voltage
Mode Control Terminals Voltage with Input Floating
VB+ = 13 V to 14 V
VIL(Moden)
VIH (Moden)
VMode(FLOAT)
V
–
–
0.825
2.6
–
V
–
V
7.0
8.0
13
SUPERVISOR CIRCUITRY (RST, VCORE)
Minimum Function VB+ for Charge Pump and Oscillator Running
Minimum VB+ for RST Assertion, VB+ Rising
RST Low Voltage
VB+ = 2.0 V, IRST ≤ 5.0 mA
VB+ (MIN)
VB+(ASSERT)
VOL
–
–
9.0
V
–
1.9
2.2
V
V
–
0.25
0.4
RST VI/O Threshold
VI/O Rising
VI/O Falling
RST Hysteresis for VI/O
RST VCORE Threshold
VCORE Rising
VCORE Falling
RST Hysteresis for VCORE
VB+ = 13 V to 32 V
VCORE - VI / O for VCORE Shutdown
VB+ = 13 V to 32 V
Thermal Shutdown Temperature
TJ Rising
Overtemperature Hysteresis
VB CHARGE PUMP
VI / OT+
VI / OT-
VHYSVI/O
VCORET+
VCORET-
VHYS CORE
V
–
–
VI/O(NOM)
VI/O (NOM)
- 300 mV
–
- 50 mV
–
10
–
100
mV
V
–
–
VCORE (NOM)
VCORE (NOM)
- 300 mV
–
- 30 mV
–
mV
10
50
100
VCORE (SHUTDOWN)
V
0.5
–
0.9
TJ (TSD)
–
TJ (HYSTERESIS)
–
°C
–
170
20
–
°C
Boost Voltage (11)
VB+ = 12 V, Ivb = 0.5 mA
VB+ = 32 V, Ivb = 0.5 mA
Notes
11. Bulk capacitor ESR ≤ 10 milliohms
V
VB
VB+ 8
VB+ 9
VB+ 10
VB
VB+ 10
VB+ 12
VB+ 14
Analog Integrated Circuit Device Data
Freescale Semiconductor
34710
7