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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

33394 데이터 시트보기 (PDF) - Freescale Semiconductor

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33394 Datasheet PDF : 44 Pages
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Freescale Se3m33ic94onductor, Inc.
1. MAXIMUM RATINGS (Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
Voltage parameters are absolute voltages referenced to ground.)
Parameter
Min.
Max.
Unit
Supply Voltage (VBAT), Load Dump
–0.3
+45
V
Supply Voltage (KA_VBAT, VIGN), Load Dump
–18
+45
V
Supply Voltages (VDDH, VPP, VDD3_3, VDDL, VKAM)
–0.3
+5.8
V
Supply Voltages (VREF1, VREF2, VREF3, VSEN)
–2.0
+18
V
CANL, CANH (0<VBAT<18 VDC no time limit)
–18
+26.5
V
ESD Voltage
Human Body Model all pins
Machine Model all pins
(Note 1)
(Note 2)
–2.0
–200
+2.0
kV
+200
V
CANLesd, CANHesd
(Note 1)
–4.0
+4.0
kV
CANLesd, CANHesd
(Note 2)
–200
+200
V
CANLtransient, CANHtransient
(Note 3)
–200
+200
V
/SLEEP
–18
+45
V
REGON, VPP_EN, /HRESET, /PORESET, /PRERESET, HRT, DO, DI, CS, SCLK
–0.3
+7.0
V
CANTXD, CANRXD
–0.3
+7.0
V
Operational Package Temperature [Ambient Temperature]
–40
+125
°C
Storage Temperature
–65
+150
°C
Power Dissipation (TA = 125_C)
44 HSOP
44 QFN
54 SOICW–EP
(Note 4)
(Note 4)
(Note 4)
8.3
W
5.0
W
5.0
W
Lead Soldering Temperature
(Note 5)
260
_C
Maximum Junction Temperature
+150
°C
RθJA, Thermal Resistance, Junction to Ambient (44 HSOP)
(Note 6)
41
°C/W
RθJC, Thermal Resistance, Junction to Case (44 HSOP)
(Note 7)
0.2
°C/W
RθJB, Thermal Resistance, Junction to Base (44 HSOP)
(Note 8)
3
°C/W
RθJA, Thermal Resistance, Junction to Ambient (44 QFN)
(Note 6)
77
°C/W
RθJC, Thermal Resistance, Junction to Case (44 QFN)
(Note 7)
1.7
°C/W
RθJB, Thermal Resistance, Junction to Base (44 QFN)
(Note 8)
5.0
°C/W
RθJA, Thermal Resistance, Junction to Ambient (54 SOICW–EP)
(Note 6)
52
°C/W
RθJC, Thermal Resistance, Junction to Case (54 SOICW–EP)
(Note 7)
1.2
°C/W
RθJB, Thermal Resistance, Junction to Base (54 SOICW–EP)
(Note 8)
8.1
°C/W
1. Human body model: C = 100 pF, R = 1.5 k.
2. Machine model: C = 200 pF, R = 10 and L = 0.75 µH. In case of a discharge from pin CANL to pin GND: – 100 V < CANL transient < +100
V; in case of a discharge from pin CANH to Vcc: –150 V < CANH transient < +150 V.
3. The waveforms of the applied transients is in accordance with ”ISO 7637 part 1” test pulses 1, 2, 3a and 3b.
4. Maximum power dissipation at indicated junction temperature.
5. Lead soldering temperature limit is for 10 seconds maximum duration; contact Motorola Sales Office for device immersion soldering
time/temperature limits.
6. Thermal resistance measured in accordance with EIA/JESD51–2.
7. Theoretical thermal resistance from the die junction to the exposed pad.
8. Thermal resistance measured in accordance with JESD51–8.
2. RECOMMENDED OPERATING CONDITIONS (All voltages are with respect to ground unless otherwise noted)
Parameter
Supply Voltages (VBAT, KA_VBAT)
Switching Regulator Output Current (IVPRE)
VDDH Output Current
(Note 1)
VDD3_3 Output Current
VDDL_B Pass Transistor Base Drive Current
VPP Output Current
VREF Output Current
VSEN Output Current
VKAM Standby Output Current (normal mode of operation)
VKAM Standby Output Current (standby mode of operation)
1. See Typical Application Diagram in Figure 1.
Value
Unit
4.0 to 26.5
V
0 to 1.2
A
0 to 400
mA
0 to 120
mA
0 to 40
mA
0 to 150
mA
0 to 100
mA
0 to 125
mA
0 to 60
mA
0 to 12
mA
For More Information On This Product,
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Go to: wwwMO.fTrOeeRsOcLAalAeN.cAoLmOG INTEGRATED CIRCUIT DEVICE DATA

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