33389 데이터 시트보기 (PDF) - Freescale Semiconductor
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33389 Datasheet PDF : 49 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions VBAT, -40°C ≤ TA ≤ 125°C unless otherwise noted. Typical values noted reflect the
approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT (CONTINUED)
V1 Output Current Limitation
V1NOM - 100 mV
V1 Overtemperature Shut OFF Threshold
Junction Temperature
V1 Pre-Warning Temperature Threshold
Junction Temperature
V1 Temperature Threshold Difference
V1 Reset Threshold on V1
5.5 V < VBAT < 27 V
V1 Reset Active V1 Range
V1 Reverse Current from V1 to VBAT and GND
V1 = 4.9 V, 0 < VBAT < 4.9 V
V2 Output Voltage
0 mA < IOUT < 200 mA 5.5 V < VBAT < 40 V
V2 Drop Voltage
IOUT = 200 mA (7)
V2 Drop Voltage
IOUT = 20 mA (7)
V2 Output Current Limitation
V2NOM -100 mV
V2 Threshold on V2 to Report V2 OFF
V2 Nominal
VR2 Delay Time
V2 Overtemperature Pre-Warning Threshold
V2 Junction Temperature
V2 Overtemperature Switch-OFF Threshold
V2 Junction Temperature
(C Version)
(D Version)
I1MAX
130
170
200
mA
TV1H
160
—
190
°C
TV1L
130
—
160
°C
TV1H-TV1L
20
—
40
°C
VR1
V
4.1
4.3
4.8
V2 - 0.4 V1 - 0.28 V1 - 0.1
V1R
IREV
1.0
VR1
—
V
—
—
1.0
mA
V2NOM
4.75
5.0
5.25
V
V2DROP
—
0.2
0.5
V
V2DROP
—
0.05
0.15
V
I1MAX
VR2
VR2
TV2L
TV2H
220
280
350
mA
4.1
4.55
4.75
V
20
—
70
µs
130
—
160
°C
155
—
185
°C
V2 Line Regulation
9.0 V < VBAT < 16.5
V2 Load Regulation
4.0 mA < ILOAD < 200 mA
V2 Line Ripple Rejection
100 Hz, 1.0 VPP on VBAT (8)
V2LR1
-15
—
+15
mV
V2LR2
-75
—
+75
mV
V2LRR
30
55
—
dB
Notes
7. Measured when V1 has dropped 100mV below its nominal value
8. Guaranteed by design; however, it is not production tested
Analog Integrated Circuit Device Data
Freescale Semiconductor
33389
9
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