31DQ09G-M3 데이터 시트보기 (PDF) - Vishay Semiconductors
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31DQ09G-M3 Datasheet PDF : 6 Pages
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VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of charge
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
3A
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.85
0.97
0.69
0.80
0.1
3
110
9.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Without cooling fin
Typical thermal resistance,
junction to lead
RthJL
DC operation
Approximate weight
Marking device
Case style C-16
VALUES
- 40 to 150
UNITS
°C
80
°C/W
34
1.2
g
0.042
oz.
31DQ09G
31DQ10G
Revision: 19-Sep-11
2
Document Number: 93322
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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